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Engineering

Research project: Advanced non-volatile memories based on resistive switching

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Resistance non-volatile memory promises great potential to replace conventional flash memories and random access memories in the near future.

Non-volatile memory device
Non-volatile memory device

Resistance memories (RMs) usually have simple metal-solid electrolyte-metal stack structures and on/off states are distinguished by stable low/high resistance electrically achieved between the metal electrodes. Key advantages of RMs include low power and fast speed operation, high scalability and CMOS compatibility, making it the most promising candidate for future universal memory. Despite a recent surge of research in this rapidly developing field, clear winners for RMs are yet to be found. Main challenges lie in the development of advanced solid electrolytes and optimization of device structures.

Resistive switching behaviour
Resistive switching behaviour

This project aims at development of such resistance memories with innovative solid electrolyte materials and device designs. This interdisciplinary project will involve thin film electronic material development as well as device design, fabrication and testing. The results also underline the studies of relevant resistive switching mechanisms.

Associated research themes

Nano Research Group

Related research groups

Engineering Materials
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