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The University of Southampton
ADEPT – Advanced Devices by ElectroPlaTing

Electrodeposition

Our patented electrodeposition processes (4) from bespoke precursor compounds can produce a range of elements (5) and compound semiconductor compositions with exceptional control and purity. For example, we have produced Ge2Sb2Te5 (GST) phase change memory films with excellent switching properties (6). The figure shows the deposition of GST into a single memory cell with 100 nm dimensions and its electrical switching over several write/reset cycles. Such individual cells have significant advantages over a solid film including stability deriving from reduction in thermal cross-talk and the possibility of increasing the number of devices per unit area.

 

There is great scope to further develop electrodeposition of compound semiconductor materials as a practical deposition technology, to make thermoelectrics and IR sensors and to scale down the size of phase change memory cells. In the production of very small devices electrodeposition can go beyond the capability of techniques such as ALD: feature sizes of 2-3 nm are well within reach and material deposition can be carried out into a variety of device architectures – we just need an electrical pathway.

 

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