About
Dr Qiang Li works on compound semiconductor materials and devices, with a particular focus on III-V epitaxy and silicon photonics. His research explores how high-performance III-V materials and devices can be grown and integrated directly on silicon, enabling new approaches to lasers, modulators and photodetectors for photonic integrated circuits.
His work spans heteroepitaxy, selective-area epitaxy and tunnel epitaxy, with applications including quantum-dot lasers, III-V membrane photonics on silicon-on-insulator, and type-II superlattice infrared detectors. A key theme is growth-device co-design, in which epitaxial structures and device architectures are developed together. This approach aims to extend the capabilities of semiconductor epitaxy and create scalable routes towards heterogeneous and monolithic integration with silicon photonics.
Dr Qiang Li is a Topical/Associate Editor of Optics Letters, a member of the EPSRC Peer Review College, and has served on programme committees for international conferences in compound semiconductor materials and epitaxy (ICMOVPE 2024, CSW 2026).