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ELEC3207 Nanoelectronic Devices

Module Overview

This module aims to provide an in-depth understanding of complimentary metal oxide semiconductor field effect transistors (CMOS) device physics and of the process flows used to fabricate CMOS transistors. It will discuss all important issues related to scaling down the transistor size into the nanometer regime, such as high-k dielectrics and FINFETs. The teaching will be complemented with a finite element simulation of the MOS scaling which will bring into practice many of the above improvements. The module uses Silvaco TCAD tools: industry-standard software to simulate semiconductor processing and device operation (Technology Computer-Aided Design).

Aims and Objectives

Module Aims

This module aims to provide an in-depth understanding of complimentary metal oxide semiconductor field effect transistors (CMOS) device physics and of the process flows used to fabricate CMOS transistors.

Learning Outcomes

Knowledge and Understanding

Having successfully completed this module, you will be able to demonstrate knowledge and understanding of:

  • Understand the fundamental device physics of semiconductors
  • Understand the operation principle of CMOS transistors
Subject Specific Practical Skills

Having successfully completed this module you will be able to:

  • Simulate the performance of CMOS transistors
Subject Specific Intellectual and Research Skills

Having successfully completed this module you will be able to:

  • Construct the process flows to fabricate CMOS transistors

Syllabus

Nanoelectronics - Technology roadmap of nano-electronics (Moore's law) - Scaling of devices and technology jump - Energy band structure in Silicon Metal Oxide Semicoductor Field Effect Transistors (MOSFET) - Basic MOSFET Operation - Threshold Voltage and Subthreshold Slope - Current/voltage characteristics - Finite Element Modelling of MOS Advanced CMOS transistors scaling - Challenge of the CMOS technologies - High-k dielectrics and Gate stack - Future interconnect - FINFET and architecture - Design for Variability - Mobility enhancement

Learning and Teaching

TypeHours
Completion of assessment task22
Wider reading or practice58
Supervised time in studio/workshop12
Preparation for scheduled sessions12
Follow-up work12
Revision10
Lecture24
Total study time150

Resources & Reading list

On-line resources. any other (online) semiconductor device physics book would be appropriate as well

Yuan Taur and Tak H. Ning. Fundamentals of Modern VLSI Devices. 

B.G. Streetman and S. Banerjee. Solid State Electronic Devices. 

Assessment

Assessment Strategy

Students can get good experiences by simulating the MOSFET characteristics after learning the fundamental principles in the lectures. Simulations and lecturing are complementary each other, and students can get more insights in understanding the MOSFETs. The learning outcomes include the capabilities to simulate unknown new device performance for their future jobs in CMOS or even beyond-CMOS industries.

Summative

MethodPercentage contribution
Examination  (2 hours) 70%
Simulation 30%

Referral

MethodPercentage contribution
Examination 100%

Repeat Information

Repeat type: Internal & External

Linked modules

Pre-requisite: ELEC2201 or COMP6238

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