Project overview
Non-equilibrium populations of spins in semiconductors can form a basis for new spintronic and quantum data processing devices in which quantum wells and two-dimensional electron gases (2DEGs) will play a central role. Our proposal is for a coordinated programme aimed at understanding the fundamental physics of electron spin-dynamics in GaAs/AIGaAs quantum wells and 2DEGs with (100) and (110) orientations. The aim is fully to investigate the factors which limit electron spin memory, its relationship to electron mobility and possibilities for controlling spin relaxation or orientation with a gate voltage, all important for spintronic applications. The standard (100)-oriented structures will allow study of spin dynamics in material of the highest available quality whereas the (110) orientation, not commonly investigated, offers the possibility for extending spin memory by as much as three orders of magnitude and control of it with applied electric field.The programme involves optical experiments in Southampton combined with specialist crystal growth in Cambridge and Nottingham, where we have unique expertise in high quality growth including (110)-oriented heterostructures. We also have fruitful collaborations with world-leading theoretical groups at the loffe Institute, St Petersburg and the University of Iowa. The project may be seen as part of a growing worldwide effort to understand and exploit spin-dependent phenomena in semiconductors for which we have an exceptionally strong team focusing on strategically essential aspects of the science of spintronics.