Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature.
Robert P. Gowers,, 2016 , Materials Letters , 178 , 60--63
D.M. Bagnall,, 2012 , Nanotechnology , 23 , 395302--1